As one of the most well-known mass-produced switching diode, the 1N4148 supplanted the older version, the 1N914. A major difference between them is in their leakage current rating at 25°C: 25 nA @ - 20V versus 5 µA @ - 75V, with greatest leakage for both at 150°C to be 50 µA @ - 20V. Today makers create the 1N4148 and offer it as either part number. It was second-sourced by numerous producers; Texas Instruments recorded their model of the diode in an October 1966 information sheet. These types of diodes have a persisting ubiquity in low-current applications.[4][5]
Despite the fact that the first 1N4148 and 1N914 existed just in a pivotal bundle, the 1N4148 was later repackaged into different surface-mount bundles.
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Specifications
- IFSM = 1.0 A (pulse width = 1 s), 4.0 A (pulse width = 1 µs) — non-repetitive peak forward surge
- VRRM = 75-100 V — maximum repetitive reverse voltage
- IF = 200-300 mA — maximum direct forward current
- VF = 1.0 V at 10 mA current
- IO = 75-200 mA — average rectified forward current
- TRR < 4 ns — reverse-recovery time
- PD = 500 mW — power dissipation
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