This Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged-packaged
device design that IGMOPNRQ power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
This package contains 5 pieces of IRFZ44N
NGN 1,155.00 |
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Features of IRFZ44N or IRFZ44NPBF POWER MOSFET
- Continuous Drain Current (Id): 41 A
- Drain-Source Breakdown Voltage (Vds): 55 V
- Drain-Source Resistance (Rds): 23 mOhms
- Transistor Polarity: N-Channel
- Operating Junction and Storage Temperature Range: - 55 to + 175oC
- Gate-Source Breakdown Voltage (Vgs): 20 V
- Gate Charge (Qg): 42 nC
- Power Dissipation (Pd): 83 W
- Mounting Style: Through Hole
- Package / Case: TO-220-3
- Model Number: IRFZ44N
- Packaging: Tube
- Model Name: IGMOPNRQ
To learn more, get the datasheet.
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